elektronische bauelemente ssq10912sg 109a, 120v, r ds(o) 10m" -ch enhancement mode power mosfet 29-jun-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 2 20 109n12sg rohs compliant product a suffix of -c specifies halogen free description the SSQ109N12SG is the highest performance trenc h n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications. the SSQ109N12SG meet the rohs and green product wit h function reliability approved. features r ds(on) Q 10m6 @v gs =10v high speed power switching enhanced body diode dv/dt capability enhanced avalanche ruggedness 100% uis tested, 100% rg tested to-220 package marking absolute maximum ratings (t j =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 120 v gate-source voltage v gs 20 v t c =25c 109 continuous drain current (silicon limited) t c =100c i d 77 a pulsed drain current i dm 300 a avalanche energy, single pulse, @l=0.4mh t c =25c e as 320 mj power dissipation t c =25c p d 214 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient r ja 50 maximum thermal resistance junction-case r jc 0.7 c / w 1 gate 3 source 2 drain date code millimeter millimeter ref. min. max. ref. min. max. a 9.96 10.36 h 2.54 bsc. b 14.7 16 i 2.04 2.92 c 2.74 bsc. j 3.745 ref. d 12.7 14.73 k 0.356 0.5 e 1.15 1.82 l 5.85 6.85 f 0.39 1.01 m 0.51 1.39 g 3.56 4.82
elektronische bauelemente ssq10912sg 109a, 120v, r ds(o) 10m" -ch enhancement mode power mosfet 29-jun-2017 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 120 - - v v gs =0, i d =250a gate threshold voltage v gs(th) 2 3 4 v v ds =v gs , i d =250a forward transfer conductance g fs - 65 - s v ds =5v, i d =20a gate-source leakage current i gss - - 100 na v gs =20v t j =25c - - 1 drain-source leakage current t j =100c i dss - - 100 a v ds =120v, v gs =0 static drain-source on-resistance r ds(on) - 8.6 10 m6 v gs =10v, i d =20a total gate charge q g - 56 - gate-source charge q gs - 18 - gate-drain (miller) change q gd - 6 - nc i d =20a v dd =60v v gs =10v turn-on delay time t d(on) - 16 - rise time t r - 21 - turn-off delay time t d(off) - 38 - fall time t f - 19 - ns v dd =60v i d =20a v gs =10v r g =106 input capacitance c iss - 4470 - output capacitance c oss - 235 - reverse transfer capacitance c rss - 9.5 - pf v gs =0 v ds =60v f=1.0mhz source-drain diode forward on voltage v sd - 0.9 1.2 v i f =20a, v gs =0 reverse recovery time t rr - 70 - ns reverse recovery charge q rr - 600 - nc v r =60v, i f =20a, dl/dt=500a/s
elektronische bauelemente ssq10912sg 109a, 120v, r ds(o) 10m" -ch enhancement mode power mosfet 29-jun-2017 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
elektronische bauelemente ssq10912sg 109a, 120v, r ds(o) 10m" -ch enhancement mode power mosfet 29-jun-2017 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
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